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STP55NF06 MOSFET ST
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The STP55NF06 is an N-channel power MOSFET with a maximum drain-source voltage of 60V, a maximum continuous drain current of 50A, and a maximum on-resistance of 0.015Ω12. It is designed using STMicroelectronics’ unique STripFET process, which minimizes input capacitance and gate charge, making it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements 12.
Here are some of the technical specifications of the STP55NF06:
Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 s) VGS ±30 V Continuous Drain Current (RJC) Steady State TC = 25°C ID 20 A TC = 100°C 13 Power Dissipation (RJC) TC = 25°C PD 36 W Pulsed Drain Current tp = 10 s IDM 76 A Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS 20 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 , IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C) EAS 18 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affec