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Transistor NTD5867NLT4G Onsemi

Transistor NTD5867NLT4G Onsemi
  • Transistor NTD5867NLT4G Onsemi
  • Transistor NTD5867NLT4G Onsemi
  • Transistor NTD5867NLT4G Onsemi
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Approx. Price: Rs 95 / PieceGet Latest Price
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Product Details:

Minimum Order Quantity100 Piece
Part NumberNTD5867NLT4G
Mounting TypeSMD
Maximum Operating Temperature+ 150 C
Maximum Power Dissipation36 W
Pin CountTO-252-4

Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 s) VGS ±30 V Continuous Drain Current (RJC) Steady State TC = 25°C ID 20 A TC = 100°C 13 Power Dissipation (RJC) TC = 25°C PD 36 W Pulsed Drain Current tp = 10 s IDM 76 A Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS 20 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 , IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C) EAS 18 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affec

Additional Information:

  • Production Capacity: 15000
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Karan Kumar (CEO)
Guru Santhi Electronics
23/11, Dharmaraja Koil Street
Chintadripet, Chennai - 600002, Tamil Nadu, India

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