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STP55NF06 MOSFET ST

STP55NF06 MOSFET ST
  • STP55NF06 MOSFET ST
  • STP55NF06 MOSFET ST
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Approx. Price: Rs 8 / PieceGet Latest Price

Product Details:

Minimum Order Quantity100 Piece
Voltage220-240 V
BrandST
Part NumberSTP55NF06
Transistor TypeNPN
Mounting TypeDIP
Current60A
Voltage60V

The STP55NF06 is an N-channel power MOSFET with a maximum drain-source voltage of 60V, a maximum continuous drain current of 50A, and a maximum on-resistance of 0.015Ω 12. It is designed using STMicroelectronics’ unique STripFET process, which minimizes input capacitance and gate charge, making it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements 12.

Here are some of the technical specifications of the STP55NF06:

ParameterValue
Drain-source breakdown voltage (VDS) 60V
Continuous drain current (ID) 50A
Drain-source on-resistance (RDS(on)) 0.015Ω
Gate threshold voltage (VGS(th)) 2V
Input capacitance 1300pF
Rise time 50ns
Fall time 15ns

 

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Transistor NTD5867NLT4G Onsemi

Transistor NTD5867NLT4G Onsemi
  • Transistor NTD5867NLT4G Onsemi
  • Transistor NTD5867NLT4G Onsemi
  • Transistor NTD5867NLT4G Onsemi
Get Best Quote
Approx. Price: Rs 95 / PieceGet Latest Price
Product Brochure

Product Details:

Minimum Order Quantity100 Piece
BrandOnsemi
Part NumberNTD5867NLT4G
Mounting TypeSMD
Maximum Operating Temperature+ 150 C
Maximum Power Dissipation36 W
Pin CountTO-252-4

Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 s) VGS ±30 V Continuous Drain Current (RJC) Steady State TC = 25°C ID 20 A TC = 100°C 13 Power Dissipation (RJC) TC = 25°C PD 36 W Pulsed Drain Current tp = 10 s IDM 76 A Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS 20 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 , IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C) EAS 18 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affec
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