Providing you the best range of transistor ntd5867nlt4g onsemi, sbr20100ct schottky diodes & rectifiers, mbr20200ct schottky diodes & rectifiers and mbr2045 schottky diodes & rectifiers with effective & timely delivery.
Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 s) VGS ±30 V Continuous Drain Current (RJC) Steady State TC = 25°C ID 20 A TC = 100°C 13 Power Dissipation (RJC) TC = 25°C PD 36 W Pulsed Drain Current tp = 10 s IDM 76 A Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS 20 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 , IL(pk) = 19 A, L = 0.1 mH, TJ = 25°C) EAS 18 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affec
Patented SBR® technology provides superior avalanche capability versus Schottky diodes, ensuring more rugged and reliable end applications. ??? Reduced ultra-low forward voltage drop (VF); Better efficiency and cooler operation. ??? Reduced high-temperature reverse leakage; Increased reliability against thermal runaway failure in high-temperature operation. ??? TO220AB, ITO220AB and ITO220AB (Type E)